New All-nMOS Quasi-adiabatic Dynamic Logic |
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| Authors: | V. V. Losev V. I. Starosel'skii |
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| Affiliation: | (1) Moscow State Institute of Electronic Engineering (Technical University), Zelenograd, Russia |
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| Abstract: | A new type of quasi-adiabatic dynamic MOS logic is proposed, which uses only n-channel FETs. With this approach, an N-input logic gate has N + 2 devices. The term quasi-adiabatic means that most of the energy delivered to the load capacitor returns to the power supply. The gates can be powered with two- or three-phase twin clock pulses. Dissipation limits are estimated. A P-SPICE simulation is presented. |
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