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半导体量子点的电容
引用本文:何红波,周继承,胡慧芳.半导体量子点的电容[J].半导体光电,2000,21(4):296-298,301.
作者姓名:何红波  周继承  胡慧芳
作者单位:长沙铁道学院信息学院材料研究所!湖南长沙410075
摘    要:当电子数目很少量,用简谐势来描述量子点中电子所受的约束是一种很准确的近似。文章利用量子力学中的少体理论方法研究了二电子系统和三电子系统的行为。少体理论可以把质心运动和相对运动分离,从而得到精确的数值解。利用单个电子在量子点中的基态波函数的束缚行为,选择了量子点的束缚能。通过对CdS、PbS等半导体纳米粒子的充电电容的计算找到了其在室温下形成单电子器件的最大粒径。

关 键 词:单电子  量子点  电容  半导体
文章编号:1001-5868(2000)04-0296-03

Capacitance of Semiconductor Quantum Dot
HE Hong bo,ZHOU Ji cheng,HU Hui fang,LI Yi bing.Capacitance of Semiconductor Quantum Dot[J].Semiconductor Optoelectronics,2000,21(4):296-298,301.
Authors:HE Hong bo  ZHOU Ji cheng  HU Hui fang  LI Yi bing
Abstract:When the number of electrons is small, harmonic potential is a good approximation to describe the confinement of electrons in quantum dots. In this paper, the behavior of two-electron and three-electron systems are investigated by few-body theory in quantum mechanics. Few-body theory can get the precise numerical solution by separating the movement of mass center and the relative movement. We select the confining energy by using the confinement of the base wavefunction of single electron in quantum dot. The maximum quantum dot sizes which can form the SET(Single Electron Transistor) at room temperature are found by the computation of the capacitance of semiconductor nanoparticles such as CdS and PbS,etc.
Keywords:single electron  quantum dot  capacitance
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