Transport and growth of GaSe from the vapour phase |
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Authors: | G.E. van Egmond R.M.A. Lieth |
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Affiliation: | Chem.Phys.Division, Dept of Physics Technological University, Eindhoven The Netherlands |
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Abstract: | A comparative study of the sublimation and chemical transport of the compound GaSe is reported. The parameters investigated in the closed system are the iodine concentration, the tube geometry, and under-cooling. The rate of transport in case of sublimation is diffusion-controlled, in the iodine-assisted transport process both diffusion and convection play a role. If the sublimation technique is used, the crystals are not exclusively plate-like, the majority of the crystals exhibit needle-like and ribbon-like habit. With growth in the length direction, the growth axis is parallel to the c-axis, it takes place around screw dislocations and two crystallization mechanisms are assumed to take place simultaneously. |
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