Crystal growth of AIIBIVC2V chalcopyrites

Crystal growth techniques were investigated for the synthesis of A^IIB^IVC₂^V chalcopyrites. High quality single crystals of ZnGeP₂ were grown by a Bridgman technique; samples showed near-theoretical transmission in the 3 to 8 μm range. The Bridgman technique was also applied to the growth of ZnSiAs₂ and CdGeAs₂. A controlled reaction process was developed for synthesis of compounds containing volatile constituents, and demonstrated for ZnP₂, an intermediate in the preparation of ZnSiP₂ and ZnGeP₂. A single-stage procedure in which the constituent elements are reacted and crystal growth ensues by vapor transport under a controlled overpressure of phosphorus was also pursued for ZnSiP₂.