Kinetic study of the reaction between copper(I) chloride and commercial silicon or silicides

The reaction of CuCl with silicon containing as impurities Al, Fe, Ca and Ti or with some silicides (Si₂Ca, Si₂Fe, Si₂Ti) has been investigated in the temperature range 250–310 °C. For the reaction between CuCl and commercial Si, it has been found that at 282 °C, the aluminium promotes the reaction between Cu₃Si and CuCl while its rate of consumption is greatly decreased by the presence of iron impurity. The combined action of these two impurities improves the quantity of the copper-silicon alloy formed. In the presence of silicides, the reaction with CuCl leads to copper formation with a high degree of dispersion.