Magnetic Resonance in ZnGeP2 and (Zn,Mn)GeP2 |
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| Authors: | P. G. Baranov S. I. Goloshchapov G. A. Medvedkin T. Ishibashi K. Sato |
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| Affiliation: | (1) Solid State Physics Division, Ioffe Physico-Technical Institute, 194021 St Petersburg, Russia;(2) Faculty of Technology, Tokyo University of Agriculture and Technology, Tokyo, Japan |
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| Abstract: | Electron paramagnetic (EPR) and ferromagnetic resonance (FMR) have been studied in the system of (Zn,Mn)GeP2 ferromagnetic layer grown on undoped ZnGeP2 single crystal. Strong FMR signals are registered in the wide temperature range up to room temperature. EPR and photo-EPR of intrinsic defects are observed in ZnGeP2 substrate. EPR spectra characteristic of Mn2+ ions on Zn2+ sites in the bulk appear after the growth of the ferromagnetic layer on ZnGeP2 crystal indicating the efficient Mn-diffusion into the bulk crystal by the annealing treatments. |
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| Keywords: | electron paramagnetic resonance ferromagnetic resonance point defects chalcopyrite |
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