| 场发射示器矩阵寻址高压驱动电路的设计研究 |
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| 引用本文： | 宋李梅,杜寰,夏洋.场发射示器矩阵寻址高压驱动电路的设计研究[J].真空电子技术,2007(5):33-36,40. |
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| 作者姓名： | 宋李梅 杜寰 夏洋 |
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| 作者单位： | 中国科学院微电子研究所,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了矩阵寻址方式的场发射驱动电路。设计出16级灰度显示的阴极驱动电路以及栅极驱动电路,并对其进行了性能仿真,仿真结果显示驱动电路性能优越。开发出与0.8μm标准CMOS工艺兼容的高压CMOS工艺,有效提高了驱动电路的集成度,并降低了生产成本。成功研制出用于场发射驱动电路输出端的100 V高低压电平转换电路,实验测得空载情况下电路的上升时间和下降时间分别为35,60 ns,能够满足高压驱动电路的频率要求。
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| 关 键 词： | 场发射 驱动电路 矩阵寻址 |
| 文章编号： | 1002-8935（2007）05-0033-04 |
| 修稿时间： | 2007-04-17 |
A High Voltage Driver IC Chip-Set for Matrix Addressed Field Emission Display |
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| SONG Li-mei,DU Huan,XIA Yang.A High Voltage Driver IC Chip-Set for Matrix Addressed Field Emission Display[J].Vacuum Electronics,2007(5):33-36,40. |
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| Authors: | SONG Li-mei DU Huan XIA Yang |
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| Affiliation: | Institute of Microelectronics , Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | A high voltage driver IC for matrix addressed FED is presented in this article. The driver IC including gate driving circuit and cathode driving circuit with 16 gray levels by PWM method were developed and simulated. And simulation results showed good performance. The HVCMOS process which is compatible with 0.8 μm standard CMOS technology had been developed to reduce the production cost and increase the packing density of panel driving system. The rise and fall time of level shifter, which acts as the output stage of FED driver IC, was 35 ns and 60 ns, respectively in the condition of no capacitor loads. |
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| Keywords: | LDMOS FED Driver IC Matrix addressing LDMOS |
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