| CVD金刚石膜{100}取向在改进化学反应模型下生长的原子尺度模拟 |
| |
| 引用本文： | 安希忠,张禹,等.CVD金刚石膜{100}取向在改进化学反应模型下生长的原子尺度模拟[J].稀有金属材料与工程,2002,31(5):349-352. |
| |
| 作者姓名： | 安希忠 张禹 |
| |
| 作者单位： | 北京科技大学,北京,100083 |
| |
| 基金项目： | 国家自然科学基金(59872003)，北京科技大学资助项目(2001060879) |
| |
| 摘 要： | 建立了CVD金刚石膜{100}取向生长过程中的化学反应模型，表面吸附生长机制以沟槽处碳氢组元加入的机制为主，并用改进的KMC方法在原子尺度上模拟了该模型下（100）表面的生长过程，给出了衬底温度和甲基浓度等操作参数对膜质量的影响，结果表明，该化学反应模型能够较实际地揭示{100}取向CVD金刚石膜的生长。
|
| 关 键 词： | CVD 金刚石膜 KMC方法 原子尺度 化学反应模型 生长机制 |
| 文章编号： | 1002-185X(2002)05-0349-04 |
| 修稿时间： | 2002年1月3日 |
An Atomic Scale Simulation on {100} Oriented CVD Diamond Film Grown under Modified Chemical Reaction Model |
| |
| An Xizhong,Zhang Yu,Liu Guoquon,Qin Xiangge,Wang Fuzhong,Liu Shengxin.An Atomic Scale Simulation on {100} Oriented CVD Diamond Film Grown under Modified Chemical Reaction Model[J].Rare Metal Materials and Engineering,2002,31(5):349-352. |
| |
| Authors: | An Xizhong Zhang Yu Liu Guoquon Qin Xiangge Wang Fuzhong Liu Shengxin |
| |
| Abstract: | In this paper, the chemical reaction model in the growth of {100} orie nted CVD (chemical vapour deposition)diamond film is founded, and the growth mec hanisms of surface chemisorption are related to: (1) the BCN mechanism; (2) the dimer insertion; and (3) the trough insertion, in which the trough insertion mec hanism is in dominant. The growth process of (100) surface under this model is s imulated in atomic scale by using the modified KMC method, and the effect of sub strate temperature and CH3 concentration on film quality is provided. The result s show that this chemical reaction model can actually reveal the growth of {100} oriented CVD diamond film. |
| |
| Keywords: | CVD diamond film MC method atomic scale simulation chemical reacti on model growth mechanism |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《稀有金属材料与工程》浏览原始摘要信息 |
|
点击此处可从《稀有金属材料与工程》下载全文 |
