| 多晶硅量子效应及其对MOSFET阈值电压的影响 |
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| 引用本文： | 孙家讹,陈军宁,柯导明,代月花,徐超.多晶硅量子效应及其对MOSFET阈值电压的影响[J].电子科技大学学报（自然科学版）,2006,35(6):967-969,984. |
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| 作者姓名： | 孙家讹 陈军宁 柯导明 代月花 徐超 |
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| 作者单位： | 1.安徽大学电子科学与技术学院 合肥 230039 |
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| 基金项目： | 国家自然科学基金资助项（60276042）;安徽省自然科学基金资助项目（01044104） |
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| 摘 要： | 根据载流子分布曲线近似,通过求解泊松方程,得到了多晶硅中电场及其电势的分布,计算了在不同掺杂浓度下多晶硅量子效应所引起的MOSFET阈值电压的偏移,并与数值模拟的结果进行了比较,表明其具有较好的准确性。
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| 关 键 词： | 多晶硅 量子效应 MOSFET 阈值电压 |
| 收稿时间： | 2005-01-17 |
| 修稿时间： | 2005-01-17 |
Polysilicon Quantization and Its Effects on MOSFET'S Threshold Voltage |
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| SUN Jia-e,CHEN Jun-ning,KE Dao-ming,DAI Yue-hua,XU Chao.Polysilicon Quantization and Its Effects on MOSFET''''S Threshold Voltage[J].Journal of University of Electronic Science and Technology of China,2006,35(6):967-969,984. |
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| Authors: | SUN Jia-e CHEN Jun-ning KE Dao-ming DAI Yue-hua XU Chao |
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| Affiliation: | 1.School of Electronic Science and Technology,Anhui University Hefei 230039 |
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| Abstract: | Based on the approximation for the charge distribution, by solving poisson equations, this paper found the distributions of electric field and electrostatic potential. Then the shift of threshold voltages due to polysilicon quantization with different polysilicon doping concentrations is calculated. The calculated results are compared with the numerical simulation results. |
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| Keywords: | polysilicon quantization MOSFET threshold voltage |
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