Novel process for low temperature crystallization of a-SiC:H for optoelectronic applications |
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Authors: | Maruf Hossain Jose Roberto Sanchez Perez Jose Marcel Rodriguez Rivera Keshab Gangopadhyay and Shubhra Gangopadhyay |
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Affiliation: | (1) Electrical and Computer Engineering, University of Missouri, Columbia, MO, USA;(2) Chemical Engineering, Polytechnic University of Puerto Rico, San Juan, PR, USA;(3) Electrical and Computer Engineering, Polytechnic University of Puerto Rico, San Juan, PR, USA; |
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Abstract: | Metal-induced crystallization (MIC) process was employed to crystallize hydrogenated amorphous silicon carbide (a-SiC:H) films
deposited by PECVD on n-type Si substrate. To optimize the crystallization process, Aluminum thin films of different thicknesses
were deposited on a-SiC:H films which were then annealed at 600 °C in N2 environment for 1 h. UV–visible spectrophotometer, atomic force microscopy (AFM) and hall measurement system were used to
characterize the films. It was observed from the UV–visible spectrum that the films crystallized using higher Al thickness
show absorption in the visible range whereas the samples crystallized with lower Al thickness did not show absorption in the
visible range but shows large absorption above the bandgap of the material. Considering UV–visible and Hall measurement data
it can be concluded that the sample crystallized with 50 nm of Al can be a good candidate for SiC–Si hetero-junction solar
cells. |
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