Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

Stacks containing from 20 to 100 alternating n and p-layers, each less than 100 nm thick, have been produced by liquid-phase epitaxy in both InP and in the quaternary alloy Int?x GaxAsyP1?y. Increasing the excitation intensity shifts the photoluminescence (PL) towards shorter wavelengths by the expected magnitude. Hetero-nipi quaternary structures displaying two PL peaks have also been grown. The relative intensities of the two peaks depend strongly on the excitation intensity.