首页 | 本学科首页   官方微博 | 高级检索  
     

基于GaAs肖特基二极管的330GHz接收前端技术研究
引用本文:姚常飞,陈振华,葛俊祥.基于GaAs肖特基二极管的330GHz接收前端技术研究[J].红外与毫米波学报,2017,36(4):446-452.
作者姓名:姚常飞  陈振华  葛俊祥
作者单位:南京信息工程大学,南京信息工程大学,南京信息工程大学
摘    要:基于GaAs肖特基二极管,设计实现了310~330 GHz的接收机前端.接收机采用330 GHz分谐波混频器作为第一级电路,为降低混频器变频损耗,提高接收机灵敏度,分析讨论了反向并联混频二极管空气桥寄生电感和互感,采用去嵌入阻抗计算方法,提取了二极管的射频、本振和中频端口阻抗,实现了混频器的优化设计,提高了变频损耗仿真精度.接收机的165 GHz本振源由×6×2倍频链实现,其中六倍频采用商用有源器件,二倍频则采用GaAs肖特基二极管实现,其被反向串联安装于悬置线上,实现了偶次平衡式倍频,所设计的倍频链在165 GHz处输出约10 dBm的功率,用以驱动330 GHz接收前端混频器.接收机第二级电路采用中频低噪声放大器,以降低系统总的噪声系数.在310~330 GHz范围内,测得接收机噪声系数小于10.5 dB,在325 GHz处测得最小噪声系数为8.5 dB,系统增益为(31±1)dB.

关 键 词:GaAs肖特基二极管  倍频器  分谐波混频器  接收机
收稿时间:2016/12/7 0:00:00
修稿时间:2017/4/14 0:00:00

Development of 330GHz receiver front-end with GaAs Schottky diodes
YAO Chang-Fei,CHEN Zhen-Hua and GE Jun-Xiang.Development of 330GHz receiver front-end with GaAs Schottky diodes[J].Journal of Infrared and Millimeter Waves,2017,36(4):446-452.
Authors:YAO Chang-Fei  CHEN Zhen-Hua and GE Jun-Xiang
Affiliation:Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing Jiangsu,Nanjing University of Information Science and Technology,Nanjing University of Information Science and Technology
Abstract:A 310-330GHz receiver front-end with Schottky diode is designed and tested. The receiver first stage is a subharmonic mixer (SHM), in order to lower conversion loss (CL) and improve receiver sensitivity, the diode parasitic parameters such as the air-bridges inductance and their mutual inductance are discussed. The diode RF, LO and IF port impedance are calculated with embedding analysis for circuit optimization and the simulated CL accuracy is improved. The LO sources is realized by a ×6×2 multiplying chain, in which the sextupler is a commercial active multiplying chip, and the balanced doubler is realized by a anti-series Schottky diode mounted on a suspended line. The chain can generate 10dBm output power at 165GHz and its generated power is applied to pump the receiver SHM. The receiver second stage is a low noise IF amplifier for lowering system noise figure. In the frequency range of 310-330GHz, the measured receiver noise figure is lower than 10.5dB, and its minimum value is 8.5dB at 325GHz. The receiver gain is 31±1dB.
Keywords:GaAs Schottky diode  Multiplier  Subharmonic mixer  Receiver
本文献已被 CNKI 等数据库收录!
点击此处可从《红外与毫米波学报》浏览原始摘要信息
点击此处可从《红外与毫米波学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号