| Dy掺杂的CdS薄膜的制备及性能分析 |
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| 引用本文： | 田磊,李蓉萍,冯松,安晓晖,任愿,夏中秋. Dy掺杂的CdS薄膜的制备及性能分析[J]. 真空, 2012, 49(3): 61-64 |
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| 作者姓名： | 田磊 李蓉萍 冯松 安晓晖 任愿 夏中秋 |
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| 作者单位： | 1. 内蒙古大学物理科学与技术学院 内蒙古 呼和浩特 010021
2. 内蒙古自治区高等学校半导体光伏技术重点实验室 内蒙古 呼和浩特 010021 |
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| 摘 要： | 采用化学水浴法在玻璃衬底上制备纯的和稀土Dy掺杂的CdS薄膜,并在N2气氛中,对以上制备的薄膜进行T=350℃、t=40min的热处理.实验结果表明,水浴温度在70℃～80℃间制备的CdS薄膜,表面致密、光滑,膜的质量最好,且为沿[111]晶向择优生长的立方闪锌矿结构.掺Dy虽未改变CdS薄膜的晶体结构,但改善了薄膜的表面形貌,使得薄膜的致密性增强、颗粒大小匀称,同时Dy的掺入增大了CdS薄膜在可见光范围内的透光率.
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| 关 键 词： | CdS薄膜 Dy掺杂 化学水浴法 |
Analysis of preparation and properties of Dy-doped CdS thin film |
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| TIAN Lei
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Li Rong-ping
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FENG Song
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AN Xiao-hui
,
REN Yuan
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XIA Zhong-qiu. Analysis of preparation and properties of Dy-doped CdS thin film[J]. Vacuum(China), 2012, 49(3): 61-64 |
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| Authors: | TIAN Lei
Li Rong-ping
FENG Song
AN Xiao-hui
REN Yuan
XIA Zhong-qiu |
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| Affiliation: | 1.School of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China; 2.Key Laboratory of Semiconductor Photovoltaic Technology of Universities of Inner Mongolia Autonomous Region,Hohhot 010021,China) |
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| Abstract: | Pure and rare-earth Dy-doped CdS thin films were prepared by chemical water bath method on glass substrates.In nitrogen atmosphere,thin films were conducted by the heat treatment for 40 minutes at temperature of 350℃.The experimental results show that CdS thin films are cubic sphalerite structure with preferred orientation,and are compact and smooth with best qualities when the water bath temperatures are between 70℃ and 80℃.Doping Dy does not change the crystal structure of CdS thin film,but improves the surface morphology,compactness and uniformity of the grain size,and at the same time increase the transmittence of CdS thin film in visible light range. |
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| Keywords: | CdS thin film Dy-doped chemical water bath method |
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