Efficient suppression of surface charge recombination by CoP-Modified nanoporous BiVO4 for photoelectrochemical water splitting

BiVO₄ is a promising photoanode material for water splitting due to its substantial absorption of solar light as well as favorable band edge positions. However, the poor water oxidation kinetics of BiVO₄ results in its insufficient photocurrent density. Herein, we demonstrate the use of CoP nanoparticles for facile surface modification of nanoporous BiVO₄ photoanode in potassium borate buffer solution (pH 9.0), which can generate a tremendous cathodic shift of ~430 mV in the onset potential for photoelectrochemical water oxidation. In addition, a remarkable photocurrent density of 4.1 mA cm^?2 is achieved at 1.23 V vs. RHE under AM 1.5G illumination. The photoelectrochemical measurement using sodium sulfite as a hole scavenger clearly shows that the greatly improved performances are attributed to the efficient suppression of interfacial charge recombination through loading of CoP catalyst. Moreover, the maximum surface charge injection yield can reach >81% at 1.23 V vs. RHE and the maximum IPCE of CoP/BiVO₄ can reach 75.8% at 420 nm, suggesting the potential application of CoP-modified BiVO₄ photoanode for overall solar water splitting in cost-effective tandem photoelectrochemical cells.