Cobalt selenide thin film: photovoltaic and impedance spectral studies by simple chemical grown technique

A thin film of cobalt selenide is deposited on the fluorescence tin oxide-coated glass surface material using a simple chemical growth technique. In this article, we report on the study of photoelectrochemical characteristics (PEC), including current–voltage, capacitance–voltage characteristics, photovoltaic power output, and spectral response in dark and light conditions. For the above parameter study, we prepared using cobalt selenide and carbon electrode (using polysulfide as electrolyte), the battery configuration is expressed as n-CoSe/NaOH (1 M)?+?Na₂S (1 M)?+?S (1 M)/C (graphite). The performance of the cobalt selenide thin film material the resulted values of respective series (R_S) and shunt (R_Sh) resistance 2.280 kΩ and 1.224 Ω, respectively. The efficiency and fill factor of these PEC cells were found to be 0.899 and 28.72%. The junction ideality value are found to be (n_D) is 0.69 in the dark and 2.72 in the light (n_L). The M–S plots are constructed using C^?2 against applied bias voltage (with respect to SCE) for CoSe PEC cell. The positive slope of the M–S plot confirms n-type conductivity of the CoSe films. The carrier density values of the samples obtained from the M–S plots varied from 3.48?×?10¹⁴ cm^?3.