P-down ZnSTeSe/ZnSe/GaAs heterostructure photodiodes |
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| Authors: | Wen-Ray Chen Teen-Hang Meen Yi-Cheng Cheng Wen-Jen Lin |
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| Affiliation: | Dept. of Electron. Eng., Nat. Formosa Univ., Yun-Lin, Taiwan; |
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| Abstract: | High-quality quaternary ZnSTeSe epitaxial layers with uniform carrier concentration of 1/spl times/10/sup 17/ cm/sup -3/ were successfully grown on p-GaAs substrates by molecular beam epitaxy. P-down ZnSTeSe/ZnSe/GaAs heterostructure photodiodes were also fabricated. It was found that the maximum quantum efficiency of the fabricated ZnSTeSe photodiodes was around 75% with a large spectral width of 500 nm. |
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