Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition |
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| Authors: | L Huang QH Chang GL Guo Y Liu YQ Xie T Wang B Ling HF Yang |
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| Affiliation: | 1. Key Laboratory of Optoelectronic Materials and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China;2. Department of Chemistry, Shanghai Normal University, Shanghai 200234, China |
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| Abstract: | We report the synthesis of high-quality graphene films on Ni foils using a cold-wall reactor by rapid thermal chemical vapor deposition (CVD). The graphene films were produced by shortening the growth time to 10 s, suggesting that a direct growth mechanism may play a larger role rather than a precipitation mechanism. A lower H2 flow rate is favorable for the growth of high-quality graphene films. The graphene film prepared without the presence of H2 has a sheet resistance as low as ～367 ohm/sq coupled with 97.3% optical transmittance at 550 nm wavelength, which is much better than for those grown by hot-wall CVD systems. These data suggest that the structural and electrical characteristics of these graphene films are comparable to those prepared by CVD on Cu. |
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