Effect of rapid thermal annealing treatment on the field-emission characteristics of nanocrystalline diamonds grown on various metal/silicon substrates |
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| Authors: | Chun-Shin Yeh Dau-Chung Wang Bohr-Ran Huang Shih-Fong Lee Jung-Fu Hsu Jen-Yuan Mao |
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| Affiliation: | (1) Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin, 64002, Taiwan, ROC;(2) Department of Electronic Engineering, Chienkuo Technology University, Changhua, Taiwan, ROC;(3) Department of Electronic Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC;(4) Department of Electrical Engineering, Dayeh University, Changhua, Taiwan, ROC;(5) Department of Electronic Engineering, Chung Chou Institute of Technology, Taipei, Taiwan, ROC |
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| Abstract: | In this study, nanocrystalline diamond (NCD) films were deposited on various metal/silicon substrates using a microwave plasma chemical vapor deposition system. Metal layers used are chromium, titanium, aluminum and were used as the electron source for field emitters. These NCD/metal/silicon structures were subsequently annealed at 500 °C in a rapid thermal annealing (RTA) furnace. After RTA treatment, the surface of NCD films becomes flat and the grain boundaries can no longer be clearly seen. The intensity of graphitic peak is substantially decreased and the sp3 content of NCD films is increased. The chemical composition of NCD film remains unchanged after RTA treatment, but the sp3/sp2 ratio in C 1s has been increased. It is found that the field-emission characteristics of diamond emitter not only can be effectively controlled by the metal used in the metal/NCD/Si structure, but also can be further enhanced by the improved microstructure of the NCD film obtained after RTA treatment. |
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