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Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers
Authors:Brosson   P. Manganote   E.J.T. Prince   F.C.
Affiliation:UNICAMP, Laboratorio de Pesquisa em Dispositivos, Campinas, Brazil;
Abstract:The waveguiding mechanism in a new GaAs/GaAlAs laser structure has been investigated by near-field and astigmatism measurements. The waist of the beam was observed in front of the mirror facet of the laser, indicating that the inverted gain profile is responsible for dielectric guiding along the junction plane.
Keywords:
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