Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide |
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Authors: | Shunpei Yamazaki Takuya Hirohashi Masahiro Takahashi Shunsuke Adachi Masashi Tsubuku Junichi Koezuka Kenichi Okazaki Yohsuke Kanzaki Hiroshi Matsukizono Seiji Kaneko Shigeyasu Mori Takuya Matsuo |
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Affiliation: | 1. Semiconductor Energy Laboratory Co., Ltd, , Atsugi‐shi, Kanagawa, 243‐0036 Japan;2. Advanced Film Device Inc., , Tochigi‐shi, Tochigi, 328‐0114 Japan;3. Sharp Corporation, , Tenri, Nara, 632‐8567 Japan |
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Abstract: | Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs. |
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Keywords: | oxide semiconductor thin‐film transistor channel‐etched TFT c‐axis‐aligned crystal (CAAC) structure In– Ga– Zn oxide (IGZO) |
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