| 具有部分n埋层的高压SJ-LDMOS器件新结构 |
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| 引用本文： | 陈万军,张波,李肇基.具有部分n埋层的高压SJ-LDMOS器件新结构[J].半导体学报,2007,28(3):355-360. |
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| 作者姓名： | 陈万军 张波 李肇基 |
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| 作者单位： | 电子科技大学IC设计中心,成都 610054;电子科技大学IC设计中心,成都 610054;电子科技大学IC设计中心,成都 610054 |
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| 摘 要： | 针对衬底辅助耗尽效应降低常规super junction LDMOS(SJ-LDMOS)击穿电压的不足,提出了一种新的具有部分n埋层的高压SJ-LDMOS器件结构.通过该部分n埋层,不仅补偿了由于衬底辅助效应所致的电荷不平衡现象,实现了高的击穿电压,而且该埋层在器件正向导通时为电流提供了辅助通道,减小了器件导通电阻.分析了器件结构参数和参杂对器件击穿电压和导通电阻的影响,结果表明文中所提出的新结构具有高的击穿电压、低的导通电阻以及较好的工艺容差等特性.此外,该结构与智能功率集成技术兼容.
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| 关 键 词： | 超级结 击穿电压 LDMOS 衬底辅助耗尽效应 super junction LDMOS breakdown voltage substrate-assisted depletion effect |
| 文章编号： | 0253-4177(2007)03-0355-06 |
| 收稿时间： | 9/7/2006 5:43:14 PM |
| 修稿时间： | 09 7 2006 12:00AM |
Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer |
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| Chen Wanjun,Zhang Bo and Li Zhaoji.Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer[J].Chinese Journal of Semiconductors,2007,28(3):355-360. |
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| Authors: | Chen Wanjun Zhang Bo and Li Zhaoji |
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| Affiliation: | Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China;Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China;Center of IC Design,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage (BV) of conventional super junction-LDMOS.The key feature of the new concept is that a partial buried layer is implemented which compensates for the charge interaction between the p-substrate and SJ region,realizing high breakdown voltage and low on-resistance.Numerical simulation results indicate that the proposed device features high breakdown voltage,low on-resistance,and reduced sensitivity to doping imbalance in the pillars.In addition,the proposed device is compatible with smart power technology. |
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| Keywords: | super junction LDMOS breakdown voltage substrate-assisted depletion effect |
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