High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers |
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| Authors: | Ping-Kuan ChangPo-Tsung Hsieh Fu-Ji TsaiChun-Hsiung Lu Chih-Hung YehNa-Fu Wang Mau-Phon Houng |
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| Affiliation: | a Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROCb Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, ROCc NexPower Technology Corporation, Taichung 421, Taiwan, ROCd Department of Electronic Engineering, Cheng-Shiu University, Kaohsiung 833, Taiwan, ROC |
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| Abstract: | This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperatures (Td) and electrode distances (between cathode and anode, E/S) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (Jsc) and thereby conversion efficiency. It is shown that the Jsc of a-Si:H solar cells can be increased by proper choice of Td and E/S of the i-a-Si:H layers. The Jsc of the a-Si:H solar cells is largely dependent on light absorption of the i-a-Si:H layer. It is demonstrated that the absorption coefficient in an i-a-Si:H layer can be increased to provide higher Jsc under fixed thickness. Results show that the optimized parameters improve the Jsc of a-Si:H solar cells to 16.52 mA/cm2, yielding an initial conversion efficiency of 10.86%. |
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| Keywords: | Short-circuit current Thin film solar cell Absorption coefficient Conversion efficiency |
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