| 轻掺铬SI-GaAs单晶的研制 |
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| 引用本文： | 谢自力 夏德谦. 轻掺铬SI-GaAs单晶的研制[J]. 固体电子学研究与进展, 1993, 13(2): 161-164 |
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| 作者姓名： | 谢自力 夏德谦 |
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| 作者单位： | 南京电子器件研究所 210016(谢自力，夏德谦，陈宏毅)，南京电子器件研究所 210016(朱志明) |
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| 摘 要： | 本文报导了LEC法SI—GaAs单晶的研制及结果分析。在SI—GaAs非掺杂单晶生长基础上,生长了一种轻掺铬的SI—GaAs单晶,并在VPE等应用中取得了较好结果。
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| 关 键 词： | 轻掺铬 半绝缘砷化镓 |
Investlgation for Low Cr-Doped SI-GaAs Single Crystal Growth |
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| Xie Zili,Xia Deqian,Chen Hongyi,Zu Zimin. Investlgation for Low Cr-Doped SI-GaAs Single Crystal Growth[J]. Research & Progress of Solid State Electronics, 1993, 13(2): 161-164 |
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| Authors: | Xie Zili Xia Deqian Chen Hongyi Zu Zimin |
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| Abstract: | This paper introduces a method of growing SI-GaAs single crystal and gives the results of analysis. On the basis of the undoped LEC-SI-GaAs single crystal,the low Cr-doped SI-GaAs single crystals were grown. The performances of devices fabricated using VPE and implantation on this materials are excellent. |
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| Keywords: | Low Cr-Doped SI-GaAs |
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