High-power pulsed GaAs double-drift hybrid-read impatt diodes for X-band |
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| Authors: | Berenz J.J. Kinoshita J. Hierl T.L. Fank F.B. |
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| Affiliation: | Varian Associates, Palo Alto, USA; |
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| Abstract: | ![]()
Gallium-arsenide double-drift hybrid-Read Impatt diodes have been developed to deliver high peak and average powers in X-band. A peak power output of 35 W with 20% efficiency has been obtained at 8.3 GHz for 20% duty cycle. Peak power output of 32 W with 20% efficiency has been obtained at 8·6 GHz for a 25% duty cycle. Peak power output of 26 W with 21.5% efficiency has been obtained at 8.6. GHz for 33% duty cycle. |
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