长波光导HgCdTe探测器的输运特性

测量了长波光导ＨｇＣｄＴｅ线列探测器在１．２～３００Ｋ的电阻率－温度（Ｒ－Ｔ）特性，结果表明：高性能和低性能探测元的Ｒ－Ｔ特性明显不同，前者有与正常ＨｇＣｄＴｅ材料Ｒ－Ｔ关系相似的变化规律，后者则与简并ＨｇＣｄＴｅ材料相似．探测器的性能与最大电阻温度有对应关系

THE TRANSPORT PROPERTIES OF THE LONG WAVE PHOTOCONDUCTIVE HgCdTe DETECTORS

The temperature dependence of the resistivity for the long wave photoconductive HgCdTe linear array detectors was measured at the temperature from 1.2 to 300K.The experimental results show that there exists a significant difference in the temperature dependence of the resistivity between high and low performance detective elements.The temperature dependence of the resistivity of high performance detective elements is similar to that of the normal HgCdTe material,whereas the temperature dependence of the resistivity of low performance detective elements is similar to that of the degenerate HgCdTe material.There is a correlation between the detector performance and the temperature at which the detector has its maximal resistance.