| 原子层沉积技术及其创新运用 |
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| 引用本文： | 施云波,;于明岩,;饶志鹏,;赵士瑞.原子层沉积技术及其创新运用[J].纳米技术与精密工程,2014(5):328-333. |
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| 作者姓名： | 施云波 ;于明岩 ;饶志鹏 ;赵士瑞 |
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| 作者单位： | [1]哈尔滨理工大学测控技术与通信工程学院测控技术与仪器黑龙江省高校重点实验室,哈尔滨150080; [2]中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京100029 |
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| 基金项目： | 国家重大科技专项基金资助项目（2009ZX02037-003）. |
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| 摘 要： | 本文分析并总结了涉及原子层沉积(atomic layer deposition,ALD)技术基本原理的若干问题.介绍了等离子增强原子层沉积(plasma enhanced atomic layer deposition,PEALD)技术的优势及常见运用.相对于传统ALD系统,PEALD最大的特点在于其能够通过等离子体放电来活化前驱体源,提高对前驱体源,尤其是气态源的利用.利用PEALD这一特点可以增加传统ALD技术中可用氮源的种类.同时PEALD原位掺杂作为一种掺杂方法能够用于对光催化材料的掺杂改性,提高其光催化性能.此外,PEALD技术还适用于温度敏感材料和柔性材料上的薄膜沉积,可以获得更低的电阻率和更高的薄膜密度等.本文重点介绍了本课题组提出的PEALD原位掺杂技术及其对TiO2光催化剂的掺杂改性运用.最后对原位掺杂技术的研究方向和发展进行了展望.
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| 关 键 词： | 原子层沉积 等离子体增强型原子层沉积 原位掺杂 TiO-xNx |
Atomic Layer Deposition Technology and Its Innovative Applications |
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| Affiliation: | Shi Yunbo, Yu Mingyan, Rao Zhipeng, Zhao Shirui ( 1. The Higher Educational Key Laboratory for Measuring ＆ Control Technology and Instrumentation of Heilongjiang Province School of Measurement-Control Technology and Communications Engineering, Harbin University of Science and Technology, Harbin 150080, China ; 2. Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China) |
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| Abstract: | Several problems of atomic layer deposition （ALD） technology are analysed and summarized in this paper. Additionally, the advantages and applications of plasma enhanced atomic layer deposition （PEALD） technology are introduced. Compared to traditional ALD system, the greatest feature of PEALD is its ability to activate precursor source through the plasma discharge to improve the utilization ratio of the precursor source, especially the gaseous source. This feature of PEALD can increase the types of available nitrogen sources in traditional ALD. Meanwhile, PEALD in-situ doping can be used to im- prove photocatalytic properties of photocatalytic materials. Furthermore, PEALD technology is also suit- able for thin film deposition of temperature-sensitive materials and flexible materials to achieve lower elec- trical resistivity and higher density of thin film. More importantly, the method of in-situ doping technology of PEALD and its impact on TiO2 photocatalyst are investigated. Finally, the future study and the devel- opment of in-situ doping technology of PEALD are presented. |
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| Keywords: | atomic layer deposition plasma enhanced atomic layer deposition in-situ doping TiO2-xNx |
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