脉冲激光模拟SRAM器件单粒子翻转效应的试验方法研究

针对0.13 μm和0.35 μm工艺尺寸的两款商用SRAM器件进行了脉冲激光背部单粒子翻转效应试验方法研究。单粒子翻转效应主要测试单粒子翻转阈值和单粒子翻转截面，本文主要研究了激光聚焦深度、激光脉冲注量、测试模式和芯片配置的数据对测试两者的影响。试验结果表明：只有聚焦到芯片有源区才可测得最低的翻转阈值和最大的翻转截面，此时的结果与重离子结果基本一致；注量对翻转阈值测试无影响，但注量增大时翻转截面会减小，测试时激光脉冲注量应小于1×10⁷cm^-2；测试模式和存储数据对翻转阈值和翻转截面的影响不大，测试时可不考虑。

Study on Method for Pulsed Laser Simulating SRAM Single Event Upset

Pulsed laser single event effect (PLSEE) facility was used to study the method for simulating single event upset (SEU) of 0.13 μm and 0.35 μm process SRAM by backside substrate. SEU threshold energy and SEU cross section, which are affected by laser focusing depth, laser pulse fluence, test mode and data stored in chips, are two main subjects of SEU test. The test results show that only focusing on active layer of chips can get the smallest SEU threshold energy and the biggest SEU cross section, which are consistent with heavy ion results. The fluence has no effect on SEU threshold energy test but greatly affects SEU cross section test, and laser pulse fluence must be smaller than 1×10⁷cm^-2. Test mode and data stored in chips have no effects on SEU test.