| 一种适用于GaN器件的谐振驱动电路 |
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| 引用本文： | 赵清林,陈磊,袁精,王玉洁.一种适用于GaN器件的谐振驱动电路[J].电力自动化设备,2019,39(4). |
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| 作者姓名： | 赵清林 陈磊 袁精 王玉洁 |
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| 作者单位： | 燕山大学电气工程学院河北省电力电子节能与传动控制重点实验室,河北秦皇岛,066004;燕山大学电气工程学院河北省电力电子节能与传动控制重点实验室,河北秦皇岛,066004;燕山大学电气工程学院河北省电力电子节能与传动控制重点实验室,河北秦皇岛,066004;燕山大学电气工程学院河北省电力电子节能与传动控制重点实验室,河北秦皇岛,066004 |
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| 基金项目： | 光宝科技电力电子技术科研基金资助项目(PRC20151384) |
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| 摘 要： | 针对氮化镓(GaN)器件,传统的驱动电路是电压源型驱动,在高频下充放电回路中的寄生电感会引起栅源电压振荡,超过GaN器件的栅源耐压值,损坏GaN器件。采用谐振驱动(RGD)电路是解决上述传统驱动存在的问题的有效途径之一,利用LC谐振,在GaN器件开通和关断时提供一条低阻抗箝位路径,减小栅源电压的振荡,提供一个稳定的栅源电压。详细分析了RGD电路的工作原理,同时设计制作了1 MHz的Boost变换器原理样机,并给出了实验结果。
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| 关 键 词： | GaN器件 谐振门极驱动 高频变换器 栅极驱动 |
| 收稿时间： | 2018/5/26 0:00:00 |
| 修稿时间： | 2019/1/24 0:00:00 |
A resonant gate driver circuit for GaN device |
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| ZHAO Qinglin,CHEN Lei,YUAN Jing and WANG Yujie.A resonant gate driver circuit for GaN device[J].Electric Power Automation Equipment,2019,39(4). |
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| Authors: | ZHAO Qinglin CHEN Lei YUAN Jing and WANG Yujie |
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| Affiliation: | Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China,Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China,Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China and Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China |
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| Abstract: | GaN devices are traditionally driven by the voltage source circuit, and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation. RGD(Resonant Gate Driver) circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage. A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off, which can reduce the oscillation of gate voltage and provide a stable gate voltage. The working principle of RGD circuit is described in detail. Meanwhile, a prototype of 1 MHz Boost converter is designed and the experimental results are provided. |
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| Keywords: | GaN device resonant gate driver high frequency converter gate driver |
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