Small turn-on delay time in 1.3 μm InAsP/InP strained doublequantum-well lasers with very-low threshold current

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks