PECVD法制备类金刚石薄膜结构和表面形貌分析

以CH4为碳源,Ar气为载气,采用等离子体增强化学气相沉积法(PECVD)在硅(100)衬底上制备了类金刚石(DLC)薄膜。利用拉曼(Raman)光谱仪与原子力显微镜(AFM)对其结构与表面形貌进行了表征。结果表明:所制备的DLC薄膜是含sp3和sp2混合键的非晶态碳膜,其表面均匀、光滑、致密;且随着射频功率的提高,薄膜的平均晶粒直径由8.0nm降为4.2nm,粗糙度由2.2nm减为0.9nm。

Structure and surface morphology of diamond-like carbon thin films prepared by PECVD method

Using CH4 as carbon source, Ar gas as carrier gas, the diamond-like carbon (DLC) thin films were prepared on the Si(100) substrate by the PECVD method. The structure and surface morphology of prepared DLC thin films were characterized with Raman spectrometer and AFM. The results show that the obtained DLC thin films are amorphous carbon films including sp3 and sp2 mixed bond. Next their surface is uniform, smooth and dense, and with the increase of RF power, average grain diameter of the thin films decreases from 8.0 nm to 4.2 nm, and the roughness declines from 2.2 nm to 0.9 nm.