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基于准MMIC技术的12~18GHz宽带VCO
引用本文:王绍东,高学邦,吴洪江,王向玮,默立冬. 基于准MMIC技术的12~18GHz宽带VCO[J]. 半导体学报, 2008, 29(1): 63-68
作者姓名:王绍东  高学邦  吴洪江  王向玮  默立冬
作者单位:河北半导体研究所,石家庄 050051;河北半导体研究所,石家庄 050051;河北半导体研究所,石家庄 050051;河北半导体研究所,石家庄 050051;河北半导体研究所,石家庄 050051
摘    要:提出了一种基于准MMIC技术的Ku波段宽带压控振荡器.该电路采用MMIC芯片和外加高Q值的超突变结变容管的方式,实现了覆盖整个Ku波段的超宽带的振荡信号输出.通过将MMIC技术与混合集成技术相结合的方法,大大降低了调试难度,更重要的是,克服了通用pHEMT MMIC工艺难于兼容高Q值的变容管对超宽带设计VCO的限制,在相位噪声和调谐频率线性度方面都有较大改善.该方法为微波、毫米波压控振荡器的设计提供了一个新的途径.

关 键 词:MMIC  宽带  VCO  Ku波段  片外变容管  键合线电感  MMIC  wide-band  VCO  Ku band  off-chip varactor  bond-wire inductor
文章编号:0253-4177(2008)01-0063-06
收稿时间:2007-06-21
修稿时间:2007-08-05

A 12~18GHz Wide Band VCO Based on Quasi-MMIC
Wang Shaodong,Gao Xuebang,Wu Hongjiang,Wang Xiangwei and Mo Lidong. A 12~18GHz Wide Band VCO Based on Quasi-MMIC[J]. Chinese Journal of Semiconductors, 2008, 29(1): 63-68
Authors:Wang Shaodong  Gao Xuebang  Wu Hongjiang  Wang Xiangwei  Mo Lidong
Affiliation:Hebei Semiconductor Research Institute,Shijiazhuang 050051,China;Hebei Semiconductor Research Institute,Shijiazhuang 050051,China;Hebei Semiconductor Research Institute,Shijiazhuang 050051,China;Hebei Semiconductor Research Institute,Shijiazhuang 050051,China;Hebei Semiconductor Research Institute,Shijiazhuang 050051,China
Abstract:Using an in-house MMIC and an off-chip,high-quality varactor,a novel wide band VCO covered Ku band is introduced.In contrast to HMIC technology,this method reduces the complexity of microchip assembly.More importantly,it overcomes the constraint that the standard commercial GaAs pHEMT MMIC process is usually not compatible with high-quality varactors for VCO,and it significantly improves the phase noise and frequency tuning linearity performances compared to either MMIC or HMIC implementation.It is a novel and high-quality method to develop microwave and millimeter wave VCO.
Keywords:MMIC  wide-band  VCO  Ku band  off-chip varactor  bond-wire inductor
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