Chromium redistribution in ion-implanted GaAs

In this paper we attempt to find systematic differences between the annealing conditions for ion implanted GaAs where Cr is observed to redistribute and the conditions where it does not. For samples where Cr redistribution was observed, we also separate electrical from chemical and/or strain interactions. The results indicate that electrical interactions are at least a limiting factor and in most cases a dominant factor in Cr redistribution. For this reason it appears that Cr redistribution in ion implanted samples can be minimized or eliminated by annealing at temperatures such that the background free carrier concentration screens out any internal electric fields.