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Model for the frequency-dependence of the capacitance in CdSCu2S solar cells
Authors:L. Vandendriessche  H. Pauwels  P. de Visschere  L. Anaf
Affiliation:Laboratory of Electronics, University of Ghent, 41 Sint-Pietersnieuwstraat, B-9000 Gent, Belgium
Abstract:It is shown, theoretically and experimentally, that deep donor levels play an important part in the structure of the space charge region of CdSCu2S solar cells. Both in the dark and under illumination, they are responsible for the frequency dependence of the capacitance, although their role in the compensation mechanism of diffused Cu-acceptors is different in both situations. These levels lie at about 0.5 eV under the conduction band, they show a spread in energy of about 0.2 eV, and have response times in the range of 10?2 to 10?6 sec.
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