1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOStransistor

In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a V_DS=70 V, with a stable gain of 23 dB at V_DS=50 V. At 3.2 GHz the power density is over 1 W/mm at V_DS=50 V and 0.6 W/mm at V_DS=28 V. These results are to our knowledge the best ever for silicon power MOSFETs