| 高频4H-SiC双极晶体管的研制 |
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| 引用本文： | 田爱华,崔占东,赵彤,刘英坤.高频4H-SiC双极晶体管的研制[J].半导体技术,2009,34(1). |
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| 作者姓名： | 田爱华 崔占东 赵彤 刘英坤 |
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| 作者单位： | 河北半导体研究所,石家庄,050051 |
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| 基金项目： | 国家重点基础研究发展规划(973计划) |
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| 摘 要： | 研制出国内第一个高频4H-SiC双极晶体管.该器件采用了双台面结构和叉指结构,室温下的最大直流电流增益(β)为3.25,集电结击穿电压BVCBO达200 V.器件的β随温度的升高而降低,具有负的温度系数,这种特性使该器件容易并联,避免出现热失控现象.器件的高频特性由矢量网络分析仪测量得到,截止频率.fT为360 MHz、最高振荡频率fmax为160 MHz.
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| 关 键 词： | 4H-碳化硅 双极晶体管 电流增益 截止频率 |
Study of High Frequency 4H-SiC Bipolar Junction Transistor |
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| Tian Aihua,Cui Zhandong,Zhao Tong,Liu Yingkun.Study of High Frequency 4H-SiC Bipolar Junction Transistor[J].Semiconductor Technology,2009,34(1). |
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| Authors: | Tian Aihua Cui Zhandong Zhao Tong Liu Yingkun |
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| Affiliation: | Hebei Semiconductor Research Institute;Shijiazhuang 050051;China |
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| Abstract: | The first high frequency 4H-SiC bipolar junction transistor made in China was reported.The device with double mesa and comb structures shows the biggest DC current gain of 3.25,and open-emitter collector base breakdown voltage(BVCBO) of 200 V at room temperature.The current gain decreases with increasing temperature,which makes the device attractive for paralleling and preventing thermal runaway.The device has fT of 360 MHz and fmax of 160 MHz,which are obtained with vector network analyzer. |
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| Keywords: | 4H-SiC bipolar junction transistor current gain cut-off frequency |
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