| 集成电路技术发展的物理极限挑战与对策 |
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| 引用本文： | 邝小飞,金湘亮. 集成电路技术发展的物理极限挑战与对策[J]. 微纳电子技术, 2001, 38(5): 17-21 |
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| 作者姓名： | 邝小飞 金湘亮 |
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| 作者单位： | 1. 零陵师专物理系,湖南,永州,425006
2. 中国科学院微电子中心,北京,100029 |
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| 摘 要： | 介绍了集成电路芯片发展的基本规律和现状 ,着重综述了这些规律在微电子学领域所遇到的物理极限挑战及解决这些问题的最新技术 ,并预测了 2 1世纪集成电路技术的重点研究方向
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| 关 键 词： | 集成电路 摩尔定律 等比例缩小规律 集成系统(IS) SOI 量子器件 |
| 文章编号： | 1001-5507(2001)05-0017-05 |
| 修稿时间： | 2001-06-21 |
Challenges of physical limits and countermeasures in the development of integrated circuits |
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| KUANG Xiao fei. Challenges of physical limits and countermeasures in the development of integrated circuits[J]. Micronanoelectronic Technology, 2001, 38(5): 17-21 |
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| Authors: | KUANG Xiao fei |
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| Abstract: | This paper first introduces the basic laws and current situations in the development of integrated circuits.Then,the challenges of physical limits in the field of microelectronics are mainly summarized,and the new technologies to solve these problems are analyzed.At last,the key research trends of integrated circuits in 21 century are anticipated. |
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| Keywords: | integrated circuit(IC) moore's law scaling down law integrated system(IS) SOI quantum device |
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