| O2/Ar气体流量比对射频磁控溅射HfO2薄膜的影响 |
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| 引用本文： | 刘文婷,刘正堂.O2/Ar气体流量比对射频磁控溅射HfO2薄膜的影响[J].真空,2011,48(3):62-66. |
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| 作者姓名： | 刘文婷 刘正堂 |
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| 作者单位： | 1. 西安石油大学材料科学与工程学院,陕西西安,710065
2. 西北工业大学材料学院,陕西西安,710072 |
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| 摘 要： | 采用射频磁控溅射法,以HfO2陶瓷作为靶材,在石英衬底上制备了HfO2薄膜.通过椭圆偏振光谱仪(SE)、X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)研究了不同O2/Ar气体流量比对薄膜沉积速率、结构、形貌等的影响.结果表明,随着O2/Ar气体流量比从0增加到0.50,薄膜的沉积速率逐渐下降.O2/Ar气体...
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| 关 键 词： | HfO2 薄膜 O2/Ar气体流量比 择优取向生长 |
Influence of O2/Ar flow ratio on HfO2 thin films prepared by RF magnetron sputtering |
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| LIU Wen-ting,LIU Zheng-tang.Influence of O2/Ar flow ratio on HfO2 thin films prepared by RF magnetron sputtering[J].Vacuum,2011,48(3):62-66. |
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| Authors: | LIU Wen-ting LIU Zheng-tang |
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| Affiliation: | LIU Wen-ting1,LIU Zheng-tang2(1.School of Materials Science and Engineering,Xi'an Shiyou University,Xi'an 710065,China,2.School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China) |
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| Abstract: | HfO2 thin films were deposited on quartz substrate by RF magnetron sputtering with HfO2 ceramic target.The influence of O2/Ar flow ratio on the deposition rate,structure and morphology of HfO2 thin films were investigated by spectroscopic ellipsometry(SE),X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM).The results showed that the deposition rate decreases with the increasing O2/Ar flow ratios from 0 to 0.50.When the O2/Ar flow ratio is 0,the prepared film grows towards preferr... |
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| Keywords: | HfO2 thin films O2/Ar flow ratio preferred orientation growth |
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