Growth and interface of amorphous La2Hf2O7/Si thin film |
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| Authors: | CHENG Xuerui QI Zeming ZHANG Huanjun ZHANG Guobin PAN Guoqiang |
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| Affiliation: | 1. Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002, China;2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China) |
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| Abstract: | ![]()
Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity (XRR) and X-ray photoelectron spec-troscopy (XPS). When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth. |
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| Keywords: | pulsed laser deposition La2Hf2O7 films rare earths |
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