Electrical properties of Ta/sub 2/O/sub 5/ gate dielectric on strained-Si |
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| Authors: | Maiti CK Chatterjee S Dalapati GK Samanta SK |
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| Affiliation: | Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India; |
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| Abstract: | High dielectric constant (high-k) thin Ta/sub 2/O/sub 5/ films have been deposited on tensilely strained silicon (strained-Si) layers using a microwave plasma enhanced chemical vapour deposition technique at a low temperature. The deposited Ta/sub 2/O/sub 5/ films show good electrical properties as gate dielectrics and are suitable for microelectronic applications. The feasibility of integration of strained-Si and high-k dielectrics has been demonstrated. |
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