|
|||||
|
|
Charge accumulation on the surface of GaAs nanowires near the Schottky contact |
|
| Authors: | M. S. Dunaevskii P. A. Alekseev M. I. Lepsa D. Grützmacher A. N. Titkov |
| Affiliation: | 1208. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2208. St. Petersburg State Electrotechnical University “LETI,”, St. Petersburg, 197376, Russia 3208. Peter Grünberg Institute (PGI-9), Research Centre Jülich, 52425, Jülich, Germany 4208. Jülich-Aachen Research Alliance for Future Information Technology (JARA-FIT), 52425, Jülich, Germany |
| Abstract: | The distribution of external potential along GaAs nanowires with electric contacts formed at the ends has been studied by the method of Kelvin probe force gradient microscopy (KPFGM). It is established that, in the case of Schottky contact formation, the application of external blocking voltage leads to charge accumulation in the surface layer of natural oxide near the contact, which significantly modifies the potential profile along the GaAs nanowire. The accumulation of charge and its dissipation upon removal of the blocking voltage proceed with characteristic times on the order of several minutes. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |