| 硅纳米线的制备与生长机理 |
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| 引用本文： | 裴立宅,唐元洪. 硅纳米线的制备与生长机理[J]. 材料科学与工程学报, 2004, 22(6): 922-928 |
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| 作者姓名： | 裴立宅 唐元洪 |
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| 作者单位： | 湖南大学,材料科学与工程学院,湖南,长沙,410082;湖南大学,材料科学与工程学院,湖南,长沙,410082 |
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| 摘 要： | 硅纳米线是一种新型的一维半导体光电材料.本文较系统地介绍了硅纳米线在制备技术、生长机理方面的研究现状与最新进展,主要就激光烧蚀法、化学气相沉积法、热气相沉积法及溶液法等制备方法和基于气-液-固机理的生长机理、氧化物辅助生长机理及固-液-固生长机理等作了较为详尽的论述.
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| 关 键 词： | 硅纳米线 制备 生长机理 |
| 文章编号： | 1004-793X(2004)06-0922-07 |
| 修稿时间： | 2004-02-20 |
Preparation and Growth Mechanism of Silicon Nanowires |
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| PEI Li-zhai,TANG Yuan-hong. Preparation and Growth Mechanism of Silicon Nanowires[J]. Journal of Materials Science and Engineering, 2004, 22(6): 922-928 |
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| Authors: | PEI Li-zhai TANG Yuan-hong |
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| Abstract: | Silicon nanowire is a new kind of one-dimensional semiconductor optoelectronic material. The recent development of pre- paration and growth mechanism of silicon nanowires are sysmetically introduced. The laser ablation method, chemical vapor deposition(CVD) method, thermal vapor deposition method, solution-grown method etc. and growth mechanisms including vapor-liquid-solid(VLS) mechanism, oxide-assisted growth mechanism, solid-liquid-solid(SLS) growth mechanism are mainly discussed. |
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| Keywords: | silicon nanowires preparation growth mechanism |
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