Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors

Authors:	Sang Yeol Lee Do Hyung Kim Bosul KimHyun Kwang Jung Dae Hwan Kim

Affiliation:	^a Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk, 360-764, Republic of Korea ^b Department of Physics, Dongguk University, Seoul 100-715, Republic of Korea ^c Nanoelectronics, University of Science and Technology, Daejeon 305-350, Republic of Korea ^d The school of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea

Abstract:	Thermally induced instability of amorphous Si-In-Zn-O (SIZO) with 1 wt.% silicon (Si) concentration and Ga-In-Zn-O (GIZO) with gallium (Ga) of 30 wt.% thin film transistors (TFTs) has been investigated, by comparing the density of states extracted from multi-frequency method. It was observed that the density of state of SIZO-TFT was lower than that of GIZO-TFT, in spite of low processing temperature of SIZO-TFT and thermally induced instability of SIZO- and GIZO-TFT was strongly related with the total trap density. We report that Si of only 1 wt.% in SIZO can improve thermal stability of threshold voltage of In-Zn-O based TFTs more effectively than Ga of 30 wt.% in GIZO.

Keywords:	Amorphous oxide semiconductor Si-In-Zn-O Ga-In-Zn-O Thin film transistor Stability
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