基于STNMOS的混合电压I／O接口ESD保护

混合电压I／O接口的静电放电（electrostaticdischarge，ESD）保护设计是小线宽工艺中片上系统（SoC）设计的主要挑战之一。混合电压I／O接口的片上ESD保护既要避免栅氧可靠性问题，又要防止不期望的泄漏电流路径产生。这篇论文讨论了基于堆叠NMOS（Stacked—NMOS，STNMOS）的混合电压I／O接口的ESD保护设计构思和电路实现，通过不同ESD保护设计方案的比较，提出了一个最有效的保护方案。

ESD Protection for mixed-voltage I/O Interfaces Based on STNMOS

Electrostatic discharge （ ESD ） protection design for mixed-voltage I/O interfaces has been one of the main challenges of system-on-a-chip （ SoC ） design in minor-line-width processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should prevent the gate-oxide reliability issues and the undesired leakage current paths. The design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces based on STNMOS is discussed in this paper. With comparisons among various ESD protection designs for mixed-voltage I/O circuits, an active ESD protection design of interface circuit is proposed.