High-gain GaAs avalanche photodiodes with proton-implanted guard ring |
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| Authors: | Susa Nobuhiko Kanbe H?ros?h? Nishioka Takashi Ohmachi Yoshiro |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer. |
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