Modeling of Yb3+-sensitized Er3+-doped silicawaveguide amplifiers |
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| Authors: | Lester C. Bjarklev A. Rasmussen T. Dinesen P.G. |
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| Affiliation: | Center for Broadband Telecommun., Tech. Univ. Denmark, Lyngby; |
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| Abstract: | ![]()
A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths between 860 and 995 nm, the amplified spontaneous emission in the ytterbium-band is found to reduce both the gain and the optimum length of the amplifier significantly. The achievable gain of the Yb3+-sensitized amplifier is found to be higher than in an Er3+-doped silica waveguide without Yb 3+ (18 dB versus 9 dB for a pump power of 100 mW). However, it is important to optimize the Yb-concentration according to the choice of pump wavelength |
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