Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy |
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Authors: | P Kurpas A Oster M Weyers A Rumberg K Knorr W Richter |
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Affiliation: | 1. Ferdinand-Braun-Institut für H?chstfrequenztechnik Berlin, Rudower Chaussee 5, D-12489, Berlin, Germany 2. Institut für Festk?rperphysik, TU Berlin, Sekr. PN 6-1, Hardenbergstr. 36, D-10623, Berlin, Germany
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Abstract: | Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. |
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Keywords: | GaAs GaAsP interface layer in-situ monitoring metalorganic vapor phase epitaxy (MOVPE) reflectance anisotropy spectroscopy (RAS) |
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