| 电场下应变纤锌矿GaN/AlxGa1-xN异质结中束缚极化子的压力效应 |
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| 引用本文： | 张敏,班士良.电场下应变纤锌矿GaN/AlxGa1-xN异质结中束缚极化子的压力效应[J].半导体学报,2010,31(5):052002-7. |
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| 作者姓名： | 张敏 班士良 |
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| 作者单位： | Department;Physics;School;Physical;Science;Technology;Inner;Mongolia;University;College;Electron;Information;Normal; |
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| 基金项目： | 国家自然科学基金(60966001) |
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| 摘 要： | 对应变纤锌矿GaN/AlxGa1-xN异质结系统，引入简化相干势近似，利用改进的LLP变换和变分法计算了流体静压力和外场作用下束缚极化子的结合能。考虑由于晶格失配所致的单、双轴应变以及界面光学声子模和半空间光学声子模与电子和杂质之间的相互作用，讨论了结合能随压力、杂质位置和流体静压力的变化关系以及声子对于斯塔克能量移动的影响。数值计算结果表明，高频支界面声子模和类LO半空间声子模对于结合能和斯塔克能移的影响是主要的，且随压力的增加而显著增大，而低频支界面声子模和类TO声子模的作用则很小，且对于杂质位置和流体静压力的变化不敏感。计算还表明，导带的弯曲也不容忽视。
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| 关 键 词： | 静水压力 束缚极化子 氮化镓 纤锌矿 电声子相互作用 光学声子模 斯塔克效应 电场 |
| 修稿时间： | 1/16/2010 8:34:03 PM |
Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field |
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| Zhang Min and Ban Shiliang.Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field[J].Chinese Journal of Semiconductors,2010,31(5):052002-7. |
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| Authors: | Zhang Min and Ban Shiliang |
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| Affiliation: | Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China; College of Physics and Electron Information, Inner Mongolia Normal University, Hohhot 010022, China;Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China |
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| Abstract: | The binding energies of bound polarons near the interface of a strained wurtzite GaN/Al_xGa_(1-x)N het-erojunction are studied by using a modified LLP variational method and a simplified coherent potential approximation under hydrostatic pressure and an external electric field.Considering the biaxial strain due to lattice mismatch or epitaxial growth,the uniaxial strain effects and the influences of the electron-phonon interaction as well as impurity-phonon interaction including the effects of interface-opt... |
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| Keywords: | bound polaron strained wurtzite heterojunction pressure electric field |
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