| 氧化锆—碳化硅复合材料室温电阻率与显微结构的关系 |
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| 引用本文： | 许小红,宋波,毛裕文.氧化锆—碳化硅复合材料室温电阻率与显微结构的关系[J].耐火材料,1997(5). |
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| 作者姓名： | 许小红 宋波 毛裕文 |
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| 作者单位： | 山西师范大学化学系!临汾，041001，北京科技大学理化系，北京科技大学理化系 |
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| 基金项目： | 冶金工业部青年科学基金 |
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| 摘 要： | 热压烧结的氧化锆-碳化硅复合材料不仅大大提高了材料的致密度，而且能使SiC在以ZrO2为主晶相的复合材料中呈网络分布，从而使SiC有较好的联通性，降低了复合材料的室温电阻率。而在常压烧结条件下，材料致密度低，SiC的联通性也较差。
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| 关 键 词： | 氧化锆 碳化硅 显微结构 电阻率 |
Relationship between microstructure and room temperature electric resistivity of ZrO_2-SiC composites |
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| Xu Xiaohong, Song Bo, Mao Yuwen.Relationship between microstructure and room temperature electric resistivity of ZrO_2-SiC composites[J].Refractories,1997(5). |
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| Authors: | Xu Xiaohong Song Bo Mao Yuwen |
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| Abstract: | Hot-pressed sintering has not only promoted the densty of the rnaterial, but also helped SiC turn to network distributed in the ZaO2 crystalline phase composite. The SiC network structure lowered the room temperathe electric resistivity of the composite. But under the routine sintering condition, the bensity of the material is lower and the roomterperature electric resistivity is higher. |
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| Keywords: | Zirconia Sillicon carbide Microstructure Resisivity |
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