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InP-based In_xGa_1-xAs metamorphic buffers with different mismatch grading rates

Authors:	Fang Xiang Gu Yi Chen Xingyou Zhou Li Cao Yuanying Li Haosibaiyin and Zhang Yonggang

Affiliation:	State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai 200083, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai 200083, China

Abstract:	Linearly graded In_xGa_1-xAs metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy. Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal, indicating the improved optical property. Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface. The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping. The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain. To further increase the relaxation degree, a lower mismatch grading rate and composition "overshoot" are suggested.

Keywords:	In_xGa_1-xAs gas source molecular beam epitaxy photoluminescence reciprocal space mapping
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