Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization |
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Authors: | Wayde R. Schmidt Vijay Sukumar William J. Hurley Jr. Roberto Garcia Robert H. Doremus Leonard V. Interrante Gary M. Renlund |
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Affiliation: | Departments of Materials Engineering and Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180–3590;General Electric Corporate Research and Development, Schenectady, New York 12301 |
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Abstract: | Partially crystalline Si3N4, with nanosized crystals and a specific surface area greater than 200 m2/g, is obtained by pyrolysis of a commercially available vinylic polysilane in a stream of anhydrous NH3 to 1000°C. This polymer does not contain N initially. Crystallization to high-purity α-Si3N4 proceeds with additional heating above 1400°C under N2. The changes in crystallinity, powder morphology, infrared spectra, and elemental compositions, for samples annealed from 1000° to 1600°C under N2, are consistent with an amorphous-to-crystalline transformation. Although macroscopic consolidation and local densification occur at 1400°C, volatilization and accompanying weight loss limit bulk densification. The effect of temperature on specific surface area is examined and related to the sintering process. These results are applicable to pyrolysis, decomposition, and crystallization studies of ceramics synthesized by polymeric precursor routes. |
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Keywords: | silicon nitride precursor polymer pyrolysis surface area |
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